cha2091 rohs compliant ref. : dscha20917150 - 30 may 07 1/8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 36-40ghz low noise amplifier gaas monolithic microwave ic description the cha2091 is a two-stage wide band monolithic low noise amplifier. the circuit is manufactured with a standard phemt process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in chip form. main features broad band performance 36-40ghz 2.5db noise figure, 36-40ghz 14db gain, 0.5db gain flatness low dc power consumption, 45ma 20dbm 3rd order intercept point chip size: 1,67 x 1,03 x 0.1mm 0 2 4 6 8 10 12 14 16 18 20 20 25 30 35 40 45 50 frequency ( ghz ) gain ( db ) 0 1 2 3 4 5 6 7 8 9 10 noise figure ( db ) on wafer typical measurements. main characteristics tamb = +25c symbol parameter min typ max unit nf noise figure, 36-40ghz 2.5 4.0 db g gain 12 14 db d g gain flatness 0.5 1.0 db esd protections : electrostatic discharge sensitive device observe handling precautions !
cha2091 36-40ghz low noise amplifier ref. dscha20917150 - 30 may 07. 2/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics tamb = +25c, bias conditions: vd = +4v id=45ma symbol parameter min typ max unit fop operating frequency range 36 40 ghz g gain (1) 12 14 db d g gain flatness (1) 0.5 1.0 db nf noise figure (1) 2.5 3.5 db vswrin input vswr (1) 3.0:1 vswrout ouput vswr (1) 3.0:1 ip3 3rd order intercept point 20 dbm p1db output power at 1db gain compression 12 dbm id drain bias current 45 ma (1) these values are representative of on-wafer mea surements that are made without bonding wires at the rf ports.when the chip is atta ched with typical 0.15nh input and output bonding wires, the indicated parameters shou ld be improved. absolute maximum ratings (1) tamb = +25c symbol parameter values unit vd drain bias voltage 4.0 v pin maximum peak input power overdrive (2) +15 dbm top operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s.
36-40ghz low noise amplifier cha2091 ref. : dscha20917150 - 30 may 07 3/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical results chip typical response ( on wafer sij ) : tamb = +25c bias conditions: vd = +4v, id=45ma freq ghz s11 db s11 s12 db s12 s21 db s21 s22 db s22 10 -6 170.2 -57.3 -141 -12.4 11.3 -5.68 177.7 12 -7.1 156.5 -54.1 -157 -9.98 -12.7 -6.93 152.9 14 -8.42 145.2 -50.3 173.7 -8.72 -32.7 -8.54 131.2 16 -10 137 -48.1 158 -6.92 -51.3 -9.44 113 18 -11.5 132.1 -49.6 138.4 -5.05 -71.3 -11.3 93 20 -13 129 -47.8 120.7 -3.74 -93.7 -14.2 81.8 21 -13.6 127.7 -48.2 107 -3.31 -101 -15.1 80.4 22 -14.2 126.6 -49.1 114.5 -2.37 -107 -15.8 75.6 23 -14.8 122.7 -50.1 130.8 -0.72 -117 -17.5 61.4 24 -16.1 116.3 -45.5 130.2 0.08 -130 -23.2 51.5 25 -18.2 111 -42.9 121.1 0.86 -138 -32.6 132.7 26 -21.8 108.1 -42.2 109.7 2.11 -146 -21.7 167.7 27 -30 127.3 -40.8 107 3.95 -156 -16.2 165.6 28 -26.2 -140 -39.6 104.3 5.61 -169 -12.9 151.8 29 -18.5 -136 -36.8 93 7.52 176 -11 140.8 30 -14.5 -146 -34.8 85 8.99 157.9 -9.98 128.3 31 -12.3 -159 -32.5 68.7 10.58 139.4 -8.78 121.3 32 -10.9 -173 -31.8 48.3 11.88 117.3 -7.48 109.9 33 -10.5 174.9 -30.8 28.7 12.69 94.8 -6.88 95.3 34 -10.5 165.2 -29.8 7.3 13.36 72.8 -6.94 82.8 35 -11.1 156.1 -29.6 -15.2 13.72 50.2 -7.25 70.8 36 -11.3 150.5 -29.5 -33.9 13.93 28.2 -7.94 60.9 37 -11.6 144 -30.1 -55.6 13.99 6.7 -8.73 52.2 38 -12 133 -29.6 -69.8 14.2 -14.5 -9.57 47.1 39 -12.9 115.4 -28.7 -85.8 14.39 -37.1 -10.2 43.7 40 -14.7 87.2 -29 -120 14.65 -61.2 -9.88 40.4 41 -15.5 25.3 -28.1 -144 14.71 -88.7 -9.19 30.1 42 -10.7 -42.3 -27.8 -176 14.34 -121 -8.66 10.8 43 -6.09 -86.6 -28.3 146.7 12.98 -154 -8.99 -16.9 44 -3.4 -119 -30.4 111.9 10.59 174.3 -10.5 -50 45 -2.22 -143 -32.9 90 7.53 147.6 -12.2 -83.8 46 -1.59 -160 -35.2 62.9 4.31 125.2 -13 -119 47 -1.15 -175 -35.3 39 1.21 105.5 -12.5 -149 48 -0.84 173.2 -43.5 -26.6 -2.06 88.2 -11.8 -174 49 -0.85 163.7 -39.4 27.3 -5.61 72.6 -10.8 169 50 -0.67 154.7 -36.9 31.8 -9.07 58.2 -10.1 156.4
cha2091 36-40ghz low noise amplifier ref. dscha20917150 - 30 may 07. 4/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical results chip typical response ( on wafer sij ) : tamb = +25c vd = +4v id=45ma -20 -15 -10 -5 0 5 10 15 20 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 frequency ( ghz ) gain, rloss ( db ) dbs11 dbs22 gain typical gain and matching measurements on wafer 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 frequency ( ghz ) gain, nf ( db ) gain nf typical gain and noise figure measurements on wafer
36-40ghz low noise amplifier cha2091 ref. : dscha20917150 - 30 may 07 5/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical results tamb = +25c vd = +4v ; id = 45ma freq = 37ghz 0 2 4 6 8 10 12 14 16 -12 -10 -8 -6 -4 -2 0 2 4 6 input power ( dbm ) output power ( dbm ) 0 2 4 6 8 10 12 14 16 gain ( db ) freq = 39.5ghz 0 2 4 6 8 10 12 14 16 -14 -12 -10 -8 -6 -4 -2 0 2 4 input power ( dbm ) output power ( dbm ) 0 2 4 6 8 10 12 14 16 gain ( db ) typical output power and gain measurements in test jig (included losses of the jig)
cha2091 36-40ghz low noise amplifier ref. dscha20917150 - 30 may 07. 6/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical chip assembly - nominal input and output bonding :0.3nh for one 2 5um bond wire. - chip backside is dc and rf bonding grounded mechanical data pad size : 80/80um, chip thickness 100um
36-40ghz low noise amplifier cha2091 ref. : dscha20919340 -10-may-2007 7/8 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip biasing this chip is a two stage amplifier, and flexibility is provided by the access to number of pads. the internal dc electrical schematic is given in or der to use these pads in a safe way. in out vg 1 vg 2 25 50 vd vds1 vds2 the two requirements are : n1 : not exceed vds = 3.5volt ( internal drain to source voltage ). n2 : not biased in such a way that vgs becomes pos itive. ( internal gate to source voltage ) we propose two standard biasing : low noise and low consumption : vd = 3.5v and id = 30ma. low noise and high output power : vd = 4.0v and id = 45ma.( a separate acces to the gate voltages of the first and the output stage is provided. nominal bias is obtained for a typical current of 30ma for the output stage and 1 5 ma for the first stage. the first step to bias the amplifier is to tune the vg1 =-1v and vg2 to drive 30ma for the full amplifier. then vg1 is reduced to obtain 45 ma of current through t he amplifier.
cha2091 36-40ghz low noise amplifier ref. dscha20917150 - 30 may 07. 8/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : cha2091-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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